effect of nitrogen addition on the band gap, core level shift, surface energy, and the threshold field of electron emission |
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effect of nitrogen addition on the band gap, core level shift, surface energy, and the threshold field of electron emission 收藏此文
全部作者 ： 卞海蛟 陈小峰 pan j. s. 朱伟光 孙长庆
第一作者单位 ： 南洋理工大学电子电气工程学院微电子中心
论文摘要 ： the effect of nitrogen (n) doping on the behavior of field emission, surface energy and the band structure of strontium titanate (srtio3) thin films coated on silicon tip arrays has been examined in detail. measurements using xps, ellipsometry, water contact angle and field emission testing revealed that the optimal 50%-nitrogen partial pressure (pn) could improve substantially the threshold field of electron emission of the srtio3 films accompanied with narrowed band gap, lowered surface energy and work function and a negative energy shift of the n 1s level from 404 to 396 ev. results evidence consistently the presence of the nonbonding lone pairs and the lone pair induced antibonding dipoles upon tetrahedron formation which is responsible for the observations. at pn below and above the optical value physisorption and hydrogen bond likes formation like to occur.
关键词 ： work function; field emission
发表日期 ： 2007年11月19日
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