the substrate temperature dependence of the field emission properties of si tip arrays with n-doped srtio3 thin films |
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the substrate temperature dependence of the field emission properties of si tip arrays with n-doped srtio3 thin films 收藏此文
全部作者 ： h. j. bian x. f. chen j. s. pan w. zhu 孙长庆
第一作者单位 ： 南洋理工大学
论文摘要 ： the effect of substrate temperature (ts) on the behavior of field emission, microstructure, optical band gap, and the surface energy of n-doped srtio3 thin films coated on silicon tip arrays has been examined in detail. results indicate that the ts dominates the chemical states of nitrogen added to the sputtered srtio3 films and hence the observations. at the critical temperature of 600°c, nitrogen atoms incorporate into the oxide film with sp-hybridization features. the generation of the nonbonding lone pair states narrows the optical band gap and the lone pair induced antibonding dipoles lower the threshold field for electron emission substantially. at lowered ts, molecular adsorption of nitrogen dominates. contact angle measurements further evidence for the presence of antibonding dipole states at the surfaces which is responsible for the adsorbate-induced surface stress.
关键词 ： nitride, fiels emission, silicon tip arrays
发表日期 ： 2007年12月10日
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