mocvd技术生长n-zno/p-gan异质结构发光器件室温电注入发光性能研究 |
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mocvd技术生长n-zno/p-gan异质结构发光器件室温电注入发光性能研究 收藏此文 全部作者： 杨天鹏 朱惠超 边继明 孙景昌 董鑫 张宝林 梁红伟 李香萍 崔永国 杜国同 第一作者单位： 吉林大学 论文摘要： the heterojunction light-emitting diode with n-zno/p-gan structure was grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (mocvd) technique. the heterojunction structure was consisted of an mg doped p-type gan layer with a hole concentration of ~1017 cm-3 and a unintentionally doped n-type zno layer with an electron concentration of ~1018 cm-3. a distinct blue-violet electroluminescence with a dominant emission peak centered at ~415nm was observed at room temperature from the heterojunction structure under forward bias conditions. the origins of the el emissions are discussed in comparison with the photoluminescence spectra, and it was supposed to be attributed to a radiative recombination in both n-zno and p-gan sides. 关键词： zno thin films; semiconductors; metalorganic chemical vapor deposition; electroluminescence spectroscopy 发表日期： 2008年03月06日 同行评议： （暂时没有） 综合评价：
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